Cellular (1800 MHz to 1995 MHz)

High Power RF LDMOS FET, 70 W, 28 V, 1805 – 1880 MHz ·Broadband input and output matching\n ·Typical EDGE performance - Average output power = 44 dBm - Gain = 16.5 dB - Efficiency = 40.5% - EVM = 2.0%\n ·Typical CW performance - Output power at P1dB = 72 W - Gain = 15.5 dB - Efficiency = 59%\n ·Capable of handling 10:1 VSWR @ 28 V, ;

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FETs

文件：4.13908 Mbytes 页数：11 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FETs

文件：4.13908 Mbytes 页数：11 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FETs

文件：4.13908 Mbytes 页数：11 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FETs

文件：4.13908 Mbytes 页数：11 Pages

INFINEON

英飞凌