High Power RF LDMOS FET 50 W, 28 V, 2300 – 2400 MHz

Input matched Asymmetric Doherty design: Main P1dB = 17 W Typ; Peak P1dB = 33 W Typ Typical Pulsed CW performance; 2350 MHz; 28 V; Doherty Configuration: Output power at P1dB = 45.7 W; Efficiency = 46.2%; Gain = 14.6 dBCapable of handling 10:1 VSWR @28 V; 50 W (CW) output power Integrated ESD pr • Input matched\n•Typical Pulsed CW performance; 2350 MHz; 28 V; Doherty Configuration: Output power at P1dB = 45.7 W; Efficiency = 46.2%; Gain = 14.6 dB\n•Integrated ESD protection\n•Pb-free and RoHS compliant ;

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Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 – 2400 MHz

Description The PTAC240502FC is a 47-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band. Features include dual-path design, input matching, high gain and thermally-enhanced package with ear

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Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 – 2400 MHz

Description The PTAC240502FC is a 47-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band. Features include dual-path design, input matching, high gain and thermally-enhanced package with ear

文件：1.32457 Mbytes 页数：8 Pages

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Package：H-37248-4；包装：散装 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：IC AMP RF LDMOS H-37248-4

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包装：散装 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：IC AMP RF LDMOS

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