650V N-Channel MOSFET

PIPSEMI

丽隽半导体

N-CHANNEL IGBT

FEATURES  Low gate charge  Trench FS Technology,  saturation voltage: VCE(sat), typ = 1.6V,IC= 20A and TC = 25°C APPLICATIONS  General purpose inverters  UPS

文件：719.51 Kbytes 页数：8 Pages

GWSEMI

唯圣电子

N-CHANNEL IGBT

APPLICATIONS General purpose inverters UPS Air Condition FEATURES Low gate charge Trench FS Technology RoHS product

文件：408.66 Kbytes 页数：7 Pages

GWSEMI

唯圣电子

N-CHANNEL IGBT

FEATURES  Low gate charge  Trench FS Technology,  saturation voltage: VCE(sat), typ = 1.6V,IC= 20A and TC = 25°C APPLICATIONS  General purpose inverters  UPS

文件：487.32 Kbytes 页数：8 Pages

GWSEMI

唯圣电子