首页 >PTA20N65A>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-CHANNELIGBT FEATURES Lowgatecharge TrenchFSTechnology, saturationvoltage:VCE(sat),typ=1.6V,IC=20AandTC=25°C APPLICATIONS Generalpurposeinverters UPS | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣电子唯圣电子有限公司 | GWSEMI | ||
N-CHANNELIGBT APPLICATIONS Generalpurposeinverters UPS AirCondition FEATURES Lowgatecharge TrenchFSTechnology RoHSproduct | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣电子唯圣电子有限公司 | GWSEMI | ||
N-CHANNELIGBT FEATURES Lowgatecharge TrenchFSTechnology, saturationvoltage:VCE(sat),typ=1.6V,IC=20AandTC=25°C APPLICATIONS Generalpurposeinverters UPS | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣电子唯圣电子有限公司 | GWSEMI | ||
N-channelTO-220/TO-220FMOSFET | SEMIPOWERXian Semipower Electronic Technology Co., Ltd. 芯派科技芯派科技股份有限公司 | SEMIPOWER | ||
N-Channel650-V(D-S)SuperJunctionMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
SiCSchottkyBarrierDiode | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
SiCSchottkyBarrierDiode | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
650VTRENCHGATEFIELD-STOPIGBT DESCRIPTION TheUTCUTG20N65-SisanTrenchField-StopInsulatedGate BipolarTransistor.itusesUTC’sadvancedtechnologytoprovide customerswithhighswitchingspeed,lowsaturationvoltageand lowswitchingloss,etc. TheUTCUTG20N65-Sissuitablefortheresonantorsoft switching | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC |
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