包装：卷带（TR） 类别：电感器，线圈，扼流圈 固定电感器 描述：MAGNETIC CUSTOM

Bourns Inc.

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MSC82003 is Designed for General Purpose Class C Power Amplifier Applications up to 2300 MHz. FEATURES: • PG = 10 dB min. at 3 W/ 2,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System

文件：60.74 Kbytes 页数：2 Pages

ASI

RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

DESCRIPTION The MSC82003 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated rated conditions.

文件：92.05 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

10Gb Duplex Multimode 50-125 OM3 LSZH Fiber

文件：474.9 Kbytes 页数：2 Pages

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