首页 >PT-113C-UL>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Plug-inSignalConditionersM-UNIT | MSYSTEMM-System Co.,Ltd. 爱模爱模系统有限公司 | MSYSTEM | ||
GainBlock | SJM SJM Prewell. All Rights Reserved. | SJM | ||
WidebandAmplifier | SJM SJM Prewell. All Rights Reserved. | SJM | ||
32.768KHzTuningFork | OSCILENT Oscilent Corporation | OSCILENT | ||
GAASINFRAREDEMITTINGDIODE | QT QT Optoelectronics | QT | ||
PLASTICINFRAREDLIGHTEMITTINGDIODE DESCRIPTION TheQEC11Xisan940nmGaAsLEDencapsulatedinaclearpeachtinted,plasticT-1package. FEATURES •λ=940nm •Chipmaterial=GaAs •Packagetype:T-1(3mm) •MatchedPhotosensor:QSC112 •NarrowEmissionAngle,24° •HighOutputPower •Packagematerialandcolor:Clear | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
PLASTICINFRAREDLIGHTEMITTINGDIODE Description TheQEE113isa940nmGaAsLEDencapsulatedinamediumwideangle,plasticsidelookerpackage. Features •λ=940nm •PackageType=Sidelooker •ChipMaterial=GaAs •MatchedPhotosensor:QSE113 •MediumWideEmissionAngle,50° •PackageMaterial:ClearEpoxy •HighOutp | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
GAASINFRAREDEMITTINGDIODE | QT QT Optoelectronics | QT | ||
PlasticInfraredLightEmittingDiode Description TheQEE113isa940nmGaAsLEDencapsulatedinamediumwideangle,plasticsidelookerpackage. Features •λ=940nm •PackageType=Sidelooker •ChipMaterial=GaAs •MatchedPhotosensor:QSE113 •MediumWideEmissionAngle,50° •PackageMaterial:ClearEpoxy •HighOutp | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
PLASTICSILICONINFRAREDPHOTOTRANSISTOR Description TheQSC112/113/114isasiliconphototransistorencapsulatedinaninfraredtransparent,blackT-1package. Features ■Tightproductiondistribution ■Steelleadframesforimprovedreliabilityinsoldermounting ■Goodoptical-to-mechanicalalignment ■Plasticpackageisinfrare | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
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