SN54SC4T08-SEP Radiation-Tolerant, 1.2-V to 5.5-V, Quadruple 2-Input Positive-AND Gates With Integrated Translation

1 Features • Vendor item drawing available, VID V62/xxx (TBD) • Total ionizing dose characterized at 30 krad(Si) – Total ionizing dose characterized radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad(Si) • Single-event effects (SEE) characterized: – Single event latc

文件：1.05589 Mbytes 页数：25 Pages

TI

德州仪器

SN54SC4T08-SEP Radiation-Tolerant, 1.2-V to 5.5-V, Quadruple 2-Input Positive-AND Gates With Integrated Translation

1 Features • Vendor item drawing available, VID V62/23620 • Total ionizing dose characterized at 30 krad(Si) – Total ionizing dose characterized radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad(Si) • Single-event effects (SEE) characterized: – Single event latch-up

文件：974.55 Kbytes 页数：25 Pages

TI

德州仪器

SN54SC4T08-SEP Radiation-Tolerant, 1.2-V to 5.5-V, Quadruple 2-Input Positive-AND Gates With Integrated Translation

1 Features • Vendor item drawing available, VID V62/23620 • Total ionizing dose characterized at 30 krad(Si) – Total ionizing dose characterized radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad(Si) • Single-event effects (SEE) characterized: – Single event latch-up

文件：974.55 Kbytes 页数：25 Pages

TI

德州仪器

SN54SC4T08-SEP Radiation-Tolerant, 1.2-V to 5.5-V, Quadruple 2-Input Positive-AND Gates With Integrated Translation

1 Features • Vendor item drawing available, VID V62/xxx (TBD) • Total ionizing dose characterized at 30 krad(Si) – Total ionizing dose characterized radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad(Si) • Single-event effects (SEE) characterized: – Single event latc

文件：1.05589 Mbytes 页数：25 Pages

TI

德州仪器

SN54SC4T08-SEP Radiation-Tolerant, 1.2-V to 5.5-V, Quadruple 2-Input Positive-AND Gates With Integrated Translation

1 Features • Vendor item drawing available, VID V62/23620 • Total ionizing dose characterized at 30 krad(Si) – Total ionizing dose characterized radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad(Si) • Single-event effects (SEE) characterized: – Single event latch-up

文件：974.55 Kbytes 页数：25 Pages

TI

德州仪器