PSMN8R5-40MSD

Marking：8D5S40；Package：SOT1210；N-channel 40 V, 8.5 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology

1.Generaldescription 60A,standardlevelN-channelenhancementmodeMOSFETin175°CLFPAK33packageusing advancedTrenchMOSSuperjunctiontechnology.Thisproducthasbeendesignedandqualifiedfor highefficiencyapplicationsathighswitchingfrequencies. 2.Featuresandbenefits •Av

PSMN8R5-40MSD

N-channel 40 V, 8.5 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology; • Avalanche rated, 100% tested\n• NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery'\n• Low QRR, QG and QGD for high system efficiency, especially at high switching frequencies\n• Low spiking and ringing for low EMI designs\n• High reliability clip bonded and solder die attach Mini Power SO8 package; no glue, no wire bonds, qualified to 175 °C\n• Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints\n• Low parasitic inductance and resistance\n;

60 A, standard level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies.\n

PSMN8R5-40HS

N-channel40V,8.5mOhm,standardlevelMOSFETinLFPAK56DusingTrenchMOStechnology

Generaldescription DualstandardlevelN-channelMOSFETinanLFPAK56D(DualPower-SO8)packageusing TrenchMOStechnology. Featuresandbenefits •DualMOSFET •Repetitiveavalancherated •HighreliabilityLFPAK56Dpackage •Copper-clip,solderdieattach •Qualifiedto175°C Appl

PSMN8R5-40MLD

N-channel40V,8.5mΩ,logiclevelMOSFETinLFPAK33usingNextPower-S3technology

1.Generaldescription 60A,logiclevelN-channelenhancementmodeMOSFETin175°CLFPAK33packageusing advancedTrenchMOSSuperjunctiontechnology.Thisproducthasbeendesignedandqualifiedfor highefficiencyapplicationsathighswitchingfrequencies. 2.Featuresandbenefits •Avala