丝印：8D5S40；Package：SOT1210；N-channel 40 V, 8.5 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology

1. General description 60 A, standard level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies. 2. Features and benefits • Av

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安世安世半导体(中国)有限公司

N-channel 40 V, 8.5 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology

60 A, standard level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies. • Avalanche rated, 100% tested\n• NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery'\n• Low QRR, QG and QGD for high system efficiency, especially at high switching frequencies\n• Low spiking and ringing for low EMI designs\n• High reliability clip bonded and so;

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N-channel 40 V, 8.5 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology

General description Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. Features and benefits • Dual MOSFET • Repetitive avalanche rated • High reliability LFPAK56D package • Copper-clip, solder die attach • Qualified to 175 °C Appl

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N-channel 40 V, 8.5 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology

1. General description 60 A, logic level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies. 2. Features and benefits • Avala

文件：300.64 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司