PSMN6R4-30MLD中文资料N-channel 30 V, 6.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology数据手册Nexperia规格书

描述 Description

Logic level gate drive N-channel enhancement mode MOSFET in an LFPAK33 package. The NextPowerS3 portfolio, utilising Nexperia’s unique “SchottkyPlus” technology, delivers high efficiency and the low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like body diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

特性 Features

• Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies
• Low spiking and ringing for low EMI designs
• Optimised for 4.5 V gate drive
• High reliability clip bonded and solder die attach Mini Power SO8 package; no glue, no wire bonds, qualified to 175°C
• Exposed leads for optimal visual solder inspection

应用 Application

• On-board DC-to-DC solutions for server and telecommunications
• Voltage regulator modules (VRM)
• Power delivery for V-core, ASIC, DDR, GPU, VGA and system components
• Brushed and brushless motor control