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PSMN6R3-120ES中文资料PSMN6R3-120ES - N-channel 120 V 6.7 mΩ standard level MOSFET in I2PAK数据手册Nexperia规格书

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厂商型号

PSMN6R3-120ES

功能描述

PSMN6R3-120ES - N-channel 120 V 6.7 mΩ standard level MOSFET in I2PAK

制造商

Nexperia Nexperia B.V. All rights reserved

中文名称

安世 安世半导体(中国)有限公司

数据手册

下载地址下载地址二

更新时间

2025-9-27 16:02:00

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PSMN6R3-120ES规格书详情

描述 Description

N-channel 120 V 6.7 mΩ standard level MOSFET in I2PAK - Standard level N-channel MOSFET in I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic power supply equipment.

特性 Features

·High efficiency due to low switching and conduction losses
·Improved dynamic avalanche performance
·Suitable for standard level gate drive
·I2PAK package for slimline adaptors & height constrained applications

应用 Application

·AC-to-DC power supply
·Synchronous rectification
·Motor control
·Slimline adaptors & chargers

技术参数

  • 制造商编号

    :PSMN6R3-120ES

  • 生产厂家

    :Nexperia

  • Package name

    :I2PAK

  • Product status

    :Production

  • Channel type

    :N

  • Number of transistors

    :1

  • V_DS [max] (V)

    :120

  • R_DSon [max] @ V_GS = 10 V (mΩ)

    :6.7

  • T_j [max] (°C)

    :175

  • I_D [max] (A)

    :70

  • Q_GD [typ] (nC)

    :61.9

  • Q_G(tot) [typ] @ V_GS = 10 V (nC)

    :207.1

  • P_tot [max] (W)

    :405

  • Q_r [typ] (nC)

    :264.2

  • V_GSth [typ] (V)

    :3

  • Automotive qualified

    :N

  • C_iss [typ] (pF)

    :11384

  • C_oss [typ] (pF)

    :534

  • Date

    :2013-05-02

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只做原装正品现货或订货假一赔十!
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