N-channel 25 V, 5.3 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without pr • Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies\n• Low spiking and ringing for low EMI designs\n• Optimised for 4.5 V gate drive\n• High reliability clip bonded and solder die attach Mini Power SO8 package; no glue, no wire bonds, qualified to 175°;

Nexperia

安世

丝印：5D325L；Package：LFPAK33；N-channel 25 V, 5.3 m廓 logic level MOSFET in LFPAK33 using NextPowerS3 Technology

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NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Nexperia
TO-263

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

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PROTEK
SOT143

Protek

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ROHM
3921

ROHM

罗姆

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