PSMN4R8-100PSE

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=120A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.8mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

PSMN4R8-100PSE

Marking：PSMN4R8-100PSE；Package：TO-220AB；N-channel 100 V 5 m廓 standard level MOSFET with improved SOA in TO220 package

PSMN4R8-100PSE_15

N-channel 100 V 5 m廓 standard level MOSFET with improved SOA in TO220 package

PSMN4R8-100BSE

N-channel100V4.8m廓standardlevelMOSFETinD2PAK

PSMN4R8-100BSE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=120A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.8mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

PSMN4R8-100BSEJ

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=120A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.8mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

PSMN4R8-100YSE

N-channel100V,4.8mOhmMOSFETwithenhancedSOAinLFPAK56E

1.Generaldescription N-channelenhancementmodeMOSFETinaLFPAK56Epackagequalifiedto175°C.Partof Nexperia'sASFETsforhotswapportfolio,thePSMN4R8-100YSEdeliversverylowRDSonanda verystronglinear-mode(SOA)performanceinahigh-reliabilitycopper-clipLFPAK56Epackage. PS