丝印：PSMN4R8-100PSE；Package：TO-220AB；N-channel 100 V 5 m廓 standard level MOSFET with improved SOA in TO220 package

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NEXPERIA

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.8mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

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ISC

无锡固电

N-channel 100 V 5 m廓 standard level MOSFET with improved SOA in TO220 package

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PHI

飞利浦

N-channel 100 V 5 mΩ standard level MOSFET with improved SOA in TO220 package

Standard level N-channel MOSFET with improved SOA in a TO220 package. Part of Nexperia's \"NextPower Live\" portfolio, the PSMN4R8-100PSE is robust enough to withstand substantial in-rush and fault condition currents during turn on/off, whilst offering a low RDS(on) characteristic to keep temperatur • Enhanced safe operating area (SOA) for superior protection during linear mode operation\n• Very low RDS(on) for low conduction losses;

Nexperia

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