丝印：PSMN4R8-100BSE；Package：D2PAK；N-channel 100 V 4.8 m廓 standard level MOSFET in D2PAK

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NEXPERIA

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.8mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

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ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 120A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.8mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

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ISC

无锡固电

N-channel 100 V 4.8 m廓 standard level MOSFET in D2PAK

文件：270.62 Kbytes 页数：13 Pages

PHI

PHI

N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK

Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. Part of Nexperia's \"NextPower Live\" portfolio, the PSMN4R8-100BSE complements the latest \"hot-swap\" controllers - robust enough to withstand substantial inrush currents during turn on, whilst offering a low RDS(on) character • Enhanced forward biased safe operating area for superior linear mode operation\n• Very low RDS(on) for low conduction losses;

Nexperia

安世