isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.3mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

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ISC

无锡固电

N-channel 80 V, 4.3 mΩ standard level MOSFET in TO220

1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching and conduction loss

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安世安世半导体(中国)有限公司

NextPower MOSFETs

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PHI

飞利浦

N-channel 80 V, 4.3 m standard level MOSFET in TO220

文件：247.23 Kbytes 页数：15 Pages

PHI

飞利浦

N-channel 80 V, 4.3 mΩ standard level MOSFET in TO220

Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. • High efficiency due to low switching and conduction losses\n• Suitable for standard level gate drive;

Nexperia

安世