isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.3mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：350.4 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 80 V, 4.3 mΩ standard level MOSFET in D2PAK

Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. • High efficiency due to low switching and condition losses\n• Suitable for standard level gate drive;

Nexperia

安世

N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK

1.1 General description Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching and conduction loss

文件：825.16 Kbytes 页数：15 Pages

NEXPERIA

安世

N-channel 80 V, 4.3 m廓 standard level MOSFET in I2PAK

文件：240.24 Kbytes 页数：15 Pages

PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.3mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：286.16 Kbytes 页数：2 Pages

ISC

无锡固电