isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.3mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

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ISC

无锡固电

N-channel 100 V 4.3 mΩ standard level MOSFET in TO-220

1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conductio

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安世安世半导体(中国)有限公司

N-channel 100 V 4.3 m廓 standard level MOSFET in TO-220

文件：202.65 Kbytes 页数：15 Pages

PHI

飞利浦

N-channel 100 V 4.3 m廓 standard level MOSFET in TO-220

文件：202.65 Kbytes 页数：15 Pages

PHI

飞利浦

N-channel 100 V 4.3 mΩ standard level MOSFET in TO-220

Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. • High efficiency due to low switching and conduction losses\n• Robust construction for demanding applications\n• Standard level gate;

Nexperia

安世