isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.3mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：285.41 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 100 V 4.3 mΩ standard level MOSFET in I2PAK

1.1 General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conduction

文件：807.68 Kbytes 页数：14 Pages

NEXPERIA

安世

N-channel 100 V 4.3 m廓 standard level MOSFET in I2PAK

文件：195.82 Kbytes 页数：14 Pages

PHI

飞利浦

N-channel 100 V 4.3 m廓 standard level MOSFET in I2PAK

文件：195.82 Kbytes 页数：14 Pages

PHI

飞利浦

PSMN4R3-100ES - N-channel 100 V 4.3 mΩ standard level MOSFET in I2PAK

N-channel 100 V 4.3 mΩ standard level MOSFET in I2PAK - Standard level N-channel MOSFET in a I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. ·High efficiency due to low switching and conduction losses\n·Robust construction for demanding applications\n·Standard level gate;

Nexperia

安世