丝印：PSMN4R2-60PL；Package：SOT78；N-channel 60 V, 3.9 mΩ logic level MOSFET in SOT78

1. General description Logic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits • High efficiency due to low switching & conduction losses • Robust construction for dem

文件：733.36 Kbytes 页数：13 Pages

NEXPERIA

安世

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 130A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.9mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

文件：333.36 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 60 V, 3.9 m廓 logic level MOSFET in SOT78

文件：262.64 Kbytes 页数：13 Pages

恩XP

N-channel 60 V, 3.9 mΩ logic level MOSFET in SOT78

Logic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools. • High efficiency due to low switching & conduction losses\n• Robust construction for demanding applications\n• Logic level gate;

Nexperia

安世