丝印：4D230L；Package：LFPAK33；N-channel 30 V, 4.2 m廓 logic level MOSFET in LFPAK33 using NextPowerS3 Technology

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NEXPERIA

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N-channel 30 V, 4.2 m廓 logic level MOSFET in LFPAK33 using NextPowerS3 Technology

文件：282.34 Kbytes 页数：13 Pages

PHI

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N-channel 30 V, 4.2 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without pr • Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies\n• Superfast switching with soft-recovery; s-factor > 1\n• Low spiking and ringing for low EMI designs\n• Unique “SchottkyPlus” technology; Schottky-like performance with < 1µA leakage at 25°C\n• Opti;

Nexperia

安世

TO-263

NEXPERIA

安世

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