isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 120A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.95Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK

1. General description Standard level gate drive N-channel enhancement mode MOSFET in a D2PAK package qualified to 175 °C. Part of Nexperia's NextPower Live portfolio, the PSMN3R7-100BSE delivers very low RDSon and a very strong linear-mode (SOA) performance. PSMN3R7-100BSE complements the lat

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NEXPERIA

安世

N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK

1. General description Standard level gate drive N-channel enhancement mode MOSFET in a D2PAK package qualified to 175 °C. Part of Nexperia's NextPower Live portfolio, the PSMN3R7-100BSE delivers very low RDSon and a very strong linear-mode (SOA) performance. PSMN3R7-100BSE complements the lat

文件：291.81 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：3C725L；Package：SOT669；N-channel 25 V 3.9 mΩ logic level MOSFET in LFPAK using NextPower technology

1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High reliability Power SO8 package, qualified to 175°C Low

文件：471.77 Kbytes 页数：16 Pages

NEXPERIA

安世

NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8)

Key applications } Synchronous buck regulators } DC-DC conversion } Voltage regulator modules (VRM) } Power OR-ing

文件：1.78504 Mbytes 页数：8 Pages

恩XP

NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8)

Key applications } Synchronous buck regulators } DC-DC conversion } Voltage regulator modules (VRM) } Power OR-ing

文件：1.78504 Mbytes 页数：8 Pages

恩XP

丝印：3C730L；Package：SOT669；N-channel 30 V 3.95mΩ logic level MOSFET in LFPAK using NextPower technology

1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High reliability Power SO8 package, qualified to 175°C Low

文件：467.99 Kbytes 页数：16 Pages

NEXPERIA

安世

丝印：D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

文件：244.57 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 25 V 3.9 m廓 logic level MOSFET in LFPAK using NextPower technology

文件：358.42 Kbytes 页数：15 Pages

PHI

飞利浦

NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8)

文件：1.8032 Mbytes 页数：8 Pages

PHI

飞利浦