isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 120A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.95Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK

1. General description Standard level gate drive N-channel enhancement mode MOSFET in a D2PAK package qualified to 175 °C. Part of Nexperia's NextPower Live portfolio, the PSMN3R7-100BSE delivers very low RDSon and a very strong linear-mode (SOA) performance. PSMN3R7-100BSE complements the lat

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丝印：D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

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无锡固电

N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK

1. General description Standard level gate drive N-channel enhancement mode MOSFET in a D2PAK package qualified to 175 °C. Part of Nexperia's NextPower Live portfolio, the PSMN3R7-100BSE delivers very low RDSon and a very strong linear-mode (SOA) performance. PSMN3R7-100BSE complements the lat

文件：291.81 Kbytes 页数：12 Pages

NEXPERIA

安世

N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK

Standard level gate drive N-channel enhancement mode MOSFET in a D2PAK package qualified to 175 °C. Part of Nexperia's \"NextPower Live\" portfolio, the PSMN3R7-100BSE delivers very low RDSon and a very strong linear-mode (SOA) performance.\n PSMN3R7-100BSE complements the latest \"hot-swap\" con • Fully optimized Safe Operating Area (SOA) for superior linear mode operation\n• Low RDSon for low I²R conduction losses;

Nexperia

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