丝印：3H3S40；Package：SOT1210；N-channel 40 V, 3.3 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology

1. General description 118 A, standard level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies. 2. Features and benefits • A

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NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

N-channel 40 V, 3.3 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology

118 A, standard level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies. • Avalanche rated, 100% tested\n• NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery'\n• Low Qrr, QG and QGD for high system efficiency, especially at high switching frequencies\n• Low spiking and ringing for low EMI designs\n• High reliability clip bonded and so;

Nexperia

安世

N-channel LFPAK 40 V 3.3 mΩ standard level MOSFET

1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides low RDSon and low gate cha

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安世安世半导体(中国)有限公司

Common mode chokes with Ferrite cores

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PREMO

普莱默

N-channel 40 V, 3.3 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology

description 118 A, logic level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies. Features and benefits • Avalanche rated,

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NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司