N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK

1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  Advanced TrenchMOS provides low RDSon and low gate charg

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N-channel TrenchMOS logic level FET

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N-channel 30 V 1.7 m廓 logic level MOSFET in LFPAK

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N-channel 30 V 1.7 m廓 logic level MOSFET in LFPAK

文件：305.88 Kbytes 页数：15 Pages

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N-channel 30 V 1.7 m廓 logic level MOSFET in LFPAK

文件：445.43 Kbytes 页数：13 Pages

恩XP

N-channel 30 V 1.7 m廓 logic level MOSFET in LFPAK

文件：305.88 Kbytes 页数：15 Pages

恩XP

N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK

Logic level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. • Advanced TrenchMOS provides low RDSon and low gate charge\n• High efficiency gains in switching power convertors\n• Improved mechanical and thermal characteristics\n• LFPAK provides maximum power density in a Power SO8 package;

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PSMN1R7-30YLH - N-channel 30 V, 1.7 mΩ, 170 A logic level MOSFET in LFPAK56 using NextPowerS3+ Technology

·100% avalanche tested at I(AS) = 100 A\n·Ultra low QG, QGD and QOSS for high systemefficiency, especially at higher switching frequencies\n·Superfast switching with soft-recovery\n·Low spiking and ringing for low EMI designs\n·Unique “SchottkyPlus” technology; Schottky-like performance with <

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