N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without pr • 100% Avalanche tested at I(AS)=190A\n• Superfast switching with soft-recovery\n• Unique “SchottkyPlus” technology; Schottky-like performance with < 1µA leakage at 25°C\n• Low parasitic inductance and resistance\n• Wave solderable; exposed leads for optimal visual solder inspection\n;

Nexperia

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丝印：0D925L；Package：LFPAK56；N-channel 25 V, 0.85 m廓, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology

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NEXPERIA

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N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology

1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High reliability Power SO8 package, qualified to 175°C  O

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NEXPERIA

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NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8)

文件：1.8032 Mbytes 页数：8 Pages

PHI

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NextPower MOSFETs

文件：1.8032 Mbytes 页数：8 Pages

PHI

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