N-channel enhancement mode field-effect transistor

Description SiliconMAX™1 products use the latest Philips TrenchMOS™2 technology to achieve the lowest possible on-state resistance in a SOT96-1 (SO8) package. Product availability: PSMN085-150K in SOT96-1 (SO8). Features ■ Very low on-state resistance ■ Fast switching ■ TrenchMOS™ techno

文件：265.66 Kbytes 页数：13 Pages

PHI

飞利浦

N-channel TrenchMOS SiliconMAX standard level FET

General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits ■

文件：208.35 Kbytes 页数：13 Pages

恩XP

N-Channel 150 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Switching Losses • 100 Rg Tested • 100 Avalanche Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch

文件：988.23 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N-channel TrenchMOS SiliconMAX standard level FET

1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b

文件：786.11 Kbytes 页数：13 Pages

NEXPERIA

安世

N-channel TrenchMOS SiliconMAX standard level FET

SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Nexperia

安世