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PSMN070-200B

N-channelTrenchMOSSiliconMAXstandardlevelFET

1.1Generaldescription SiliconMAXstandardlevelN-channelenhancementmodeField-EffectTransistor(FET)in aplasticpackageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedfor useincomputing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandb

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PSMN070-200B

N-channelTrenchMOStransistor

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PSMN070-200B

N-channelTrenchMOStransistor

GENERALDESCRIPTION SiliconMAXproductsusethelatestPhilipsTrenchtechnologytoachievethelowestpossibleon-stateresistanceineachpackageateachvoltagerating. FEATURES •’Trench’technology •Verylowon-stateresistance •Fastswitching •Lowthermalresistance Applications:-

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PSMN070-200P

N-Channel200V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFETS •175°CJunctionTemperature •NewLowThermalResistancePackage •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •Industrial

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

PSMN070-200P

N-channelTrenchMOSSiliconMAXstandardlevelFET

1.1Generaldescription SiliconMAXstandardlevelN-channelenhancementmodeField-EffectTransistor(FET)in aplasticpackageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedfor useincomputing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandb

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PSMN070-200P

N-channelTrenchMOStransistor

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PSMN070-200P

N-channelTrenchMOStransistor

GENERALDESCRIPTION SiliconMAXproductsusethelatestPhilipsTrenchtechnologytoachievethelowestpossibleon-stateresistanceineachpackageateachvoltagerating. FEATURES •’Trench’technology •Verylowon-stateresistance •Fastswitching •Lowthermalresistance Applications:-

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

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