丝印：059150；Package：SOT669；N-channel TrenchMOS SiliconMAX standard level FET

1. General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 2. Features and ben

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NEXPERIA

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N-channel TrenchMOS standard level FET

文件：87.84 Kbytes 页数：12 Pages

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N-channel TrenchMOS SiliconMAX standard level FET

文件：291.11 Kbytes 页数：12 Pages

PHI

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N-channel TrenchMOS SiliconMAX standard level FET

SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. • Higher operating power due to low thermal resistance\n• Suitable for high frequency applications due to fast switching characteristics;

Nexperia

安世