丝印：PSMN057；Package：SOT404；N-channel TrenchMOS SiliconMAX standard level FET

1. General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 2. Features and ben

文件：272.2 Kbytes 页数：10 Pages

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丝印：PSMN057；Package：SOT78；N-channel TrenchMOS SiliconMAX standard level FET

1. General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 2. Features and ben

文件：250.06 Kbytes 页数：9 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 39A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 57mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：349.54 Kbytes 页数：2 Pages

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无锡固电

N-channel TrenchMOS transistor

GENERAL DESCRIPTION SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance Applications:-

文件：98.06 Kbytes 页数：9 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 39A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 57mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.11 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS transistor

GENERAL DESCRIPTION SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance Applications:-

文件：92.75 Kbytes 页数：8 Pages

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N-channel TrenchMOS SiliconMAX standard level FET

文件：238.54 Kbytes 页数：11 Pages

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N-channel TrenchMOS SiliconMAX standard level FET

文件：181.23 Kbytes 页数：13 Pages

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N-channel TrenchMOS SiliconMAX standard level FET

文件：181.23 Kbytes 页数：13 Pages

恩XP

N-channel TrenchMOS SiliconMAX standard level FET

SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. • Higher operating power due to low thermal resistance\n• Low conduction losses due to low on-state resistance\n• Suitable for high frequency applications due to fast switching characteristics;

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