N-channel TrenchMOS transistor

GENERAL DESCRIPTION SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance Applications:-

文件：92.75 Kbytes 页数：8 Pages

PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 39A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 57mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.11 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：PSMN057；Package：SOT78；N-channel TrenchMOS SiliconMAX standard level FET

1. General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 2. Features and ben

文件：250.06 Kbytes 页数：9 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

N-channel TrenchMOS SiliconMAX standard level FET

文件：181.23 Kbytes 页数：13 Pages

恩XP

N-channel TrenchMOS SiliconMAX standard level FET

文件：181.23 Kbytes 页数：13 Pages

恩XP

N-channel TrenchMOS SiliconMAX standard level FET

SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. • Higher operating power due to low thermal resistance\n• Low conduction losses due to low on-state resistance\n• Suitable for high frequency applications due to fast switching characteristics;

Nexperia

安世