isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 22A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 46mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：349.37 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 22A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 46mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：371.95 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 80 V 46 mΩ standard level MOSFET

1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conduction l

文件：343.71 Kbytes 页数：15 Pages

NEXPERIA

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NEXPERIA

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N-channel 80 V 46 m廓 standard level MOSFET in D2PAK

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恩XP

PSMN050-80BS - N-channel 80 V 46 mΩ standard level MOSFET in D2PAK

N-channel 80 V 46 mΩ standard level MOSFET in D2PAK - Standard level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. ·High efficiency due to low switching and conduction losses\n·Robust construction for demanding applications\n·Standard level gate;

Nexperia

安世

N-channel 80 V 46 mΩ standard level MOSFET

Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

Nexperia

安世