N-channel TrenchMOS transistor

GENERAL DESCRIPTION SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance Applications:-

文件：103.58 Kbytes 页数：9 Pages

PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 56A@ TC=25℃ ·Drain Source Voltage -VDSS= 150V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 30mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：348.97 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS SiliconMAX standard level FET

1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b

文件：831 Kbytes 页数：12 Pages

NEXPERIA

安世

N-channel TrenchMOS SiliconMAX standard level FET

1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b

文件：838.7 Kbytes 页数：13 Pages

NEXPERIA

安世

N-channel TrenchMOS transistor

GENERAL DESCRIPTION SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance Applications:-

文件：97.89 Kbytes 页数：8 Pages

PHI

飞利浦

N-Channel MOSFET

FEATURES ·Drain Current -ID= 55.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 150V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 30mΩ(Max)@VGS= 10V APPLICATIONS ·Switch Mode Power Supply (SMPS) ·Uninterruptible Power Supply (UPS) ·Power Factor Correction (PFC)

文件：318.96 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel LFPAK 60 V 24.7 m廓 standard level MOSFET

General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features and benefits ■ Advanced TrenchMOS provides low RDSon and low gate charge ■ Hig

文件：238.66 Kbytes 页数：13 Pages

恩XP

N-channel LFPAK 60 V 24.7 mΩ standard level MOSFET

1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides low RDSon and low gate cha

文件：825.12 Kbytes 页数：15 Pages

NEXPERIA

安世

N-channel TrenchMOS SiliconMAX standard level FET

文件：174.41 Kbytes 页数：12 Pages

恩XP

N-channel TrenchMOS SiliconMAX standard level FET

文件：174.41 Kbytes 页数：12 Pages

恩XP