isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 10.5mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

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N-channel 25 V 10.6 m廓 logic level MOSFET in LFPAK using NextPower technology

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N-channel logic level TrenchMOS횚 transistor

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丝印：010L80；Package：LFPAK56；N-channel 80 V, 10 m廓 logic level MOSFET in LFPAK56

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NEXPERIA

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N-channel 25 V 10.6 mΩ logic level MOSFET in LFPAK using NextPower technology

Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

Nexperia

安世

N-channel 80 V, 10 mΩ logic level MOSFET in LFPAK56

Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. • Advanced TrenchMOS provides low RDSon and low gate charge\n• Logic level gate operation\n• Avalanche rated, 100% tested\n• LFPAK provides maximum power density in a Power SO8 package;

Nexperia

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N-channel logic level TrenchMOSÔ transistor

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