N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: PSMN008-75P in SOT78 PSMN008-75B in SOT404 (D2-PAK). Features ■ Fast switching ■ Low on-state resistance ■ Avalanche ruggedness rated. Applications

文件：132.64 Kbytes 页数：14 Pages

PHI

PHI

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 75V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.5mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：349.88 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS SiliconMAX standard level FET

1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b

文件：718.21 Kbytes 页数：12 Pages

NEXPERIA

安世

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 75V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.5mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.45 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS SiliconMAX standard level FET

1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b

文件：335.74 Kbytes 页数：13 Pages

NEXPERIA

安世

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: PSMN008-75P in SOT78 PSMN008-75B in SOT404 (D2-PAK). Features ■ Fast switching ■ Low on-state resistance ■ Avalanche ruggedness rated. Applications

文件：132.64 Kbytes 页数：14 Pages

PHI

PHI

N-channel TrenchMOS SiliconMAX standard level FET

General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits ■

文件：222.02 Kbytes 页数：12 Pages

恩XP

N-channel TrenchMOS SiliconMAX standard level FET

文件：220.09 Kbytes 页数：12 Pages

恩XP

N-channel TrenchMOS SiliconMAX standard level FET

SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. • Higher operating power due to low thermal resistance\n• Low conduction losses due to low on-state resistance\n• Rated for avalanche ruggedness\n• Suitable for high frequency applications due to fast switching characteristics;

Nexperia

安世

N-channel TrenchMOS SiliconMAX standard level FET

SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Nexperia

安世