丝印：PSMN1R5-40PS；Package：SOT78；N-channel 40 V 1.6 mΩ standard level MOSFET in TO220

1. General description Standard level N-channel MOSFET in SOT78 (TO220) using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits • High efficiency due to low switching and conduction losses • Robust constr

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丝印：PSMN1R6-30BL；Package：SOT404；N-channel 30 V 1.9 mΩ logic level MOSFET in D2PAK

1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conduction loss

文件：816.82 Kbytes 页数：15 Pages

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丝印：PSMN1R8-30BL；Package：SOT404；N-channel 30 V, 1.8 mΩ logic level MOSFET in D2PAK

1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conduction loss

文件：812.55 Kbytes 页数：15 Pages

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丝印：PSMN2R1-40PL；Package：SOT78；N-channel 40 V, 2.2 mΩ logic level MOSFET in SOT78

1. General description Logic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits • High efficiency due to low switching & conduction losses • Robust construction for dem

文件：733.74 Kbytes 页数：13 Pages

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丝印：PSMN2R2-40BS；Package：SOT404；N-channel 40 V 2.2 mΩ standard level MOSFET in D2PAK

1.1 General description Standard level N-channel MOSFET in SOT404 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conduction

文件：817.35 Kbytes 页数：15 Pages

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丝印：PSMN2R2-40PS；Package：SOT78；N-channel 40 V 2.1 mΩ standard level MOSFET

1. General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • High efficiency due to low switching and conduction loss

文件：749.46 Kbytes 页数：13 Pages

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丝印：PSMN2R5-60PL；Package：SOT78；N-channel 60 V, 2.6 mΩ logic level MOSFET in SOT78

1. General description Logic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits • High efficiency due to low switching & conduction losses • Robust construction for dem

文件：731.79 Kbytes 页数：13 Pages

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丝印：PSMN2R6-60PS；Package：SOT78；N-channel 60 V, 2.6 mΩ standard level MOSFET in SOT78

1. General description Standard level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits • High efficiency due to low switching & conduction losses • Robust construction for

文件：731.32 Kbytes 页数：13 Pages

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丝印：PSMN2R7-30BL；Package：SOT404；N-channel 30 V 3.0 mΩ logic level MOSFET in D2PAK

1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conduction loss

文件：984.09 Kbytes 页数：15 Pages

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丝印：PSMN2R8-40BS；Package：SOT404；N-channel 40 V 2.9 mΩ standard level MOSFET in D2PAK

1.1 General description Standard level N-channel MOSFET in SOT404 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conduction

文件：819.83 Kbytes 页数：15 Pages

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