600V N-ch Planar MOSFET

PIPSEMI

丽隽半导体

CoolMOSTM Power Transistor Features Intrinsic fast-recovery body diode

Features • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge • Extreme dv /dt rated • High peak current capability • Qualified according to JEDEC1) for target applications CoolMOS CFD designed for: • Soft switching PWM Stages • LCD & CR

文件：348.3 Kbytes 页数：12 Pages

INFINEON

英飞凌

CoolMOSTM Power Transistor Features Intrinsic fast-recovery body diode

Features • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge • Extreme dv /dt rated • High peak current capability • Qualified for industrial grade applications according to JEDEC1) CoolMOS CFD designed for: • Soft switching PWM Stages • LC

文件：340.77 Kbytes 页数：12 Pages

INFINEON

英飞凌

CoolMOS Power Transistor

文件：673.02 Kbytes 页数：13 Pages

INFINEON

英飞凌