Schottky Barrier Diode

Prisemi

芯导科技

600V - 17A - IGBT Application: Inverter

Features  Short circuit withstand time (6 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (25 ns typ.) in one package  Trench gate and thin wafer technology  High speed switching tf = 75 ns

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RENESAS

瑞萨

DIP8

Mini-Circuits

上传：深圳市向鸿伟业电子有限公司

PRISEMI

芯导科技

上传：深圳市兴联达电子有限公司(原兴达电子)

BGA

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

上传：深圳市昂芯微科技有限公司