2.5 A OUTPUT CURRENT, HIGH CMR, IGBT GATE DRIVE, 8-PIN DIP PHOTOCOUPLER

文件：1.26505 Mbytes 页数：22 Pages

CEL

2.5 A OUTPUT CURRENT, HIGH CMR, IGBT GATE DRIVE, 8-PIN DIP PHOTOCOUPLER

文件：657.88 Kbytes 页数：22 Pages

RENESAS

瑞萨

2.5 A OUTPUT CURRENT, HIGH CMR, IGBT GATE DRIVE, 8-PIN DIP PHOTOCOUPLER

文件：1.26505 Mbytes 页数：22 Pages

CEL

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

文件：378.27 Kbytes 页数：6 Pages

SAMSUNG

三星

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

文件：508.31 Kbytes 页数：12 Pages

SAMSUNG

三星

TRANSISTORS

Features: ■ P-Channel Versatility ■ Compact Plastic Package ■ Fast Switching ■ Low Drive Current ■ Ease of Paralleling ■ Excellent Temperature Stability

文件：449.2 Kbytes 页数：6 Pages

IRF