IRF9531中文资料三星数据手册PDF规格书
IRF9531规格书详情
FEATURES
• Low RDS(on)
• Improved inductive ruggedness
• Fsat switching times
• Rugged polysilicon gate cell structure
• Low input capacitance
• Extended safe operating area
• Improved high temperature reliability
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VBSEMI |
24+ |
NA/ |
3520 |
原装现货,当天可交货,原型号开票 |
询价 | ||
IR |
24+ |
TO-220 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
IR |
23+ |
TO-220 |
7300 |
专注配单,只做原装进口现货 |
询价 | ||
IR |
24+ |
TO-220 |
200 |
询价 | |||
VBSEMI |
24+ |
TO220F |
33487 |
郑重承诺只做原装进口现货 |
询价 | ||
SEC |
TO-220 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
IR |
23+ |
TO-220 |
7000 |
询价 | |||
IR |
24+ |
TO-220 |
27500 |
原装正品,价格最低! |
询价 | ||
IR |
22+ |
TO-220 |
6000 |
十年配单,只做原装 |
询价 | ||
VBSEMI |
23+ |
TO220F |
50000 |
全新原装正品现货,支持订货 |
询价 |
