General Purpose Metal Oxide Resistor

Features: • Lower-cost alternative to carbon comps and wirewounds • Coating meets UL 94V-0 • Meets solvent test of Mil Standard 202, Method 215 • Cut and formed product is available on select sizes - contact Stackpole • Higher or lower resistance values may be possible - contact Stackpole •

文件：597.72 Kbytes 页数：9 Pages

SEIStackpole Electronics Inc.

斯塔克波尔斯塔克波尔电子公司

General Purpose Metal Oxide Resistor

Features: • Lower-cost alternative to carbon comps and wirewounds • Coating meets UL 94V-0 • Meets solvent test of Mil Standard 202, Method 215 • Cut and formed product is available on select sizes - contact Stackpole • Higher or lower resistance values may be possible - contact Stackpole •

文件：597.72 Kbytes 页数：9 Pages

SEIStackpole Electronics Inc.

斯塔克波尔斯塔克波尔电子公司

General Purpose Metal Oxide Resistor

Features: • Lower-cost alternative to carbon comps and wirewounds • Coating meets UL 94V-0 • Meets solvent test of Mil Standard 202, Method 215 • Cut and formed product is available on select sizes - contact Stackpole • Higher or lower resistance values may be possible - contact Stackpole •

文件：597.72 Kbytes 页数：9 Pages

SEIStackpole Electronics Inc.

斯塔克波尔斯塔克波尔电子公司

General Purpose Metal Oxide Resistor

Features: • Lower-cost alternative to carbon comps and wirewounds • Coating meets UL 94V-0 • Meets solvent test of Mil Standard 202, Method 215 • Cut and formed product is available on select sizes - contact Stackpole • Higher or lower resistance values may be possible - contact Stackpole •

文件：597.72 Kbytes 页数：9 Pages

SEIStackpole Electronics Inc.

斯塔克波尔斯塔克波尔电子公司

Low Input Offset Voltage VIO≤1mV Single Power Supply Dual Operational Amplifiers

Features Low input offset voltage ±1mV (Max.) Low input offset voltage temperature drift ±1μV/°C (Typ.) The package line-up is MSOP

文件：871.57 Kbytes 页数：11 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

Gate Driver IC for IGBTs and SiC MOSFETs

1. Description The RAJ2930004AGM is a gate driver IC for IGBT and SiC MOSFET gate-drive in high voltage inverter applications. Integrated 3750Vrms micro-isolators provide data transfer with high voltage isolation between the primary circuit (MCU side) and the secondary circuit (IGBT side). In a

文件：740.34 Kbytes 页数：10 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

600V - 10A - Triac Medium Power Use

Features • IT (RMS) : 10 A • VDRM : 600 V • Tj: 150°C • IFGTI, IRGTI, IRGT III: 50 mA • Insulated Type • Planar Passivation Type • Viso: 2000 V

文件：509.28 Kbytes 页数：9 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

DC-DC Converter UNIT 1 W REGULATED DC-DC CONVERTER

文件：164.15 Kbytes 页数：4 Pages

POWER-SYSTEMS

Power Systems GmbH+Co.KG

DC-DC Converter UNIT 1 W REGULATED DC-DC CONVERTER

文件：164.15 Kbytes 页数：4 Pages

POWER-SYSTEMS

Power Systems GmbH+Co.KG

DC-DC Converter UNIT 1 W REGULATED DC-DC CONVERTER

文件：164.15 Kbytes 页数：4 Pages

POWER-SYSTEMS

Power Systems GmbH+Co.KG