首页 >PR025-100R>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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N-channelTrenchMOSSiliconMAXstandardlevelFET 1.1Generaldescription SiliconMAXstandardlevelN-channelenhancementmodeField-EffectTransistor(FET)in aplasticpackageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedfor useincomputing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandb | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
N-channelTrenchMOS횚transistor | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=47A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=25mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel100V,24.5mOhm,standardlevelMOSFETinLFPAK56DusingTrenchMOStechnology Generaldescription DualstandardlevelN-channelMOSFETinanLFPAK56D(DualPower-SO8)packageusing TrenchMOStechnology. Featuresandbenefits •HighpeakdraincurrentIDM •CopperclipandflexibleLeads •HighoperatingjunctiontemperatureTj=175°C •Superiorreliability •Low | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
High-SpeedProtectors | BournsBourns Electronic Solutions 伯恩斯 | Bourns | ||
BidirectionalDualTBU짰Protectors | BournsBourns Electronic Solutions 伯恩斯 | Bourns | ||
TBU-CASeries-TBU짰High-SpeedProtectors | BournsBourns Electronic Solutions 伯恩斯 | Bourns | ||
TBUHighSpeedProtectors | BournsBourns Electronic Solutions 伯恩斯 | Bourns | ||
TBU-CASeries-TBU짰High-SpeedProtectors | BournsBourns Electronic Solutions 伯恩斯 | Bourns | ||
TBU®High-SpeedProtectors Features -Superiorcircuitprotection -Overcurrentandovervoltageprotection -Blockssurgesuptoratedlimits -High-speedperformance -SmallSMTpackage -Agencylisting: -RoHS*andAEC-Q101compliant** Applications -Voice/VDSLcards -Protectionmodulesanddongles -Proce | BournsBourns Electronic Solutions 伯恩斯 | Bourns |
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