首页 >PQPF7N60C>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
7.3A600VSingleN?륝hannelPowerMOSFET | PFC PFC Device Inc. | PFC | ||
SiliconN-ChannelMOSFET Features 7A,600V,RDS(on)(Max1.2Ω)@VGS=10V Ultra-lowGateCharge(Typical29nC) FastSwitchingCapability 100%AvalancheTested IsolationVoltage(VISO=4000VAC) MaximumJunctionTemperatureRange(150℃) | RECTRON Rectron Semiconductor | RECTRON | ||
N-ChannelMOSFET | semiWell SemiWell Semiconductor | semiWell | ||
N-ChannelMOSFET | semiWell SemiWell Semiconductor | semiWell | ||
SiliconN-ChannelMOSFET | WinsemiShenzhen Wenxian Microelectronics Co., Ltd 稳先微电子深圳市稳先微电子有限公司 | Winsemi | ||
N-ChannelMOSFET | semiWell SemiWell Semiconductor | semiWell | ||
N-CHANNELPOWERMOSFET | SISEMICShenzhen SI Semiconductors Co.,LTD. 深爱半导体深圳深爱半导体股份有限公司 | SISEMIC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
ESeriesPowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Ser | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
ESeriesPowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS • | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
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