BD5253G-TR

Marking：PP；Package：SSOP5；Free Delay Time Setting CMOS Voltage Detector IC Series

Description ROHM’sBD52□□G/FVEandBD53□□G/FVEseriesarehighlyaccurate,lowcurrentconsumptionresetICserieswithabuilt-indelaycircuit.Thelineupwasestablishedwithtowoutputtypes(NchopendrainandCMOSoutput)anddetectionvoltagesrangefrom2.3Vto6.0Vinincrementsof0.1V,

CMDZ6L8

Marking：PP；Package：SOD-323；SUPERmini. LOW LEVEL ZENER DIODE 250mW, 2.4 VOLTS THRU 36 VOLTS

DESCRIPTION: TheCENTRALSEMICONDUCTORCMDZ1L8SeriesSiliconLowLevelZenerDiodeisahighqualityvoltageregulator,manufacturedinaSUPERmini™surfacemountpackage,designedforapplicationsrequiringalowoperatingcurrent,lowleakage,andasharpknee. MARKINGCODE:SEEMARKINGCODES

CMDZ6L8

Marking：PP；Package：SOD-323；SUPERmini LOW LEVEL ZENER DIODE 250mW, 1.8 VOLTS THRU 47 VOLTS

DESCRIPTION: TheCENTRALSEMICONDUCTORCMDZ1L8SeriesSiliconLowLevelZenerDiodeisahighqualityvoltageregulator,manufacturedinaSUPERmini™surfacemountpackage,designedforapplicationsrequiringalowoperatingcurrent,lowleakage,andasharpknee. MARKINGCODE:SEEMARKINGCODES

CMDZ6L8

Marking：PP；Package：SOD-323；SURFACE MOUNT SILICON LOW LEVEL ZENER DIODE

DESCRIPTION: TheCENTRALSEMICONDUCTORCMDZ1L8SeriesSiliconLowLevelZenerDiodeisahighqualityvoltageregulator,manufacturedinaSUPERmini™surfacemountpackage,designedforapplicationsrequiringalowoperatingcurrent,lowleakage,andasharpknee. MARKINGCODE:SEEMARKINGCODES

ESD160V12D-C

Marking：PP；Package：SOD-123；Transient Voltage Suppressors for ESD Protection

Features 1000WattsPeakPulsePowerperLine(tp=8/20μs) 200WattsPeakPulsePowerperLine(tp=10/1000μs) ProtectsoneI/Olineorpowerline Lowclampingvoltage Workingvoltages:5Vto190V Lowleakagecurrent IEC61000-4-2(ESD)±30kV(air),±30kV(contact) IEC61000-4-4(EFT)80A(5/

NC7S08L6X

Marking：PP；Package：SIP6；TinyLogic HS 2-Input AND Gate

Description TheNC7S08isasingle2−InputhighperformanceCMOSAND Gate.AdvancedSiliconGateCMOSfabricationassureshighspeed andlowpowercircuitoperationoverabroadVCCrange.ESD protectiondiodesinherentlyguardbothinputsandoutputwithrespect totheVCCandGNDrails.Thr

NC7S08L6X-L22175

Marking：PP；Package：SIP6；TinyLogic HS 2-Input AND Gate

Description TheNC7S08isasingle2−InputhighperformanceCMOSAND Gate.AdvancedSiliconGateCMOSfabricationassureshighspeed andlowpowercircuitoperationoverabroadVCCrange.ESD protectiondiodesinherentlyguardbothinputsandoutputwithrespect totheVCCandGNDrails.Thr

P6SMB300

Marking：PP；SURFACE MOUNT TRANSIENT VOLTAGE SUPPESSOR DIODE

Features ●GlassPassivatedDieConstruction ●Uni-andBi-DirectionalVersionsAvailable ●ExcellentClampingCapability ●FastResponseTime ●PlasticMaterial:ULFlammabilityClassificationRating94V-0

P6SMBJ110A

Marking：PP；SURFACE MOUNT TRANSIENT VOLTAGE SUPPESSOR DIODE

Features ●GlassPassivatedDieConstruction ●Uni-andBi-DirectionalVersionsAvailable ●ExcellentClampingCapability ●FastResponseTime ●PlasticMaterial:ULFlammabilityClassificationRating94V-0

RTF015N03

Marking：PP；Package：TUMT3；2.5V Drive Nch MOS FET

Features 1)Lowon-resistance. 2)2.5VDrive. 3)Built-inG-SProtectionDiode. 4)SmallSurfaceMountPackage(TUMT3). 5)Pb-freeleadplating;RoHScompliant Application Switching