首页 >POPA593DNT>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
ADS1131REFandADS1231REF | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
SolidTantalumSurfaceMountChipCapacitorsTANTAMOUNT®,MoldedCase,LowESR FEATURES •LowESR •Moldedcaseavailableinfivecasecodes •Terminations:100mattetin,standard,tin/leadavailable •Highripplecurrentcarryingcapability •Compatiblewith“HighVolume”automaticpickandplaceequipment •Moisturesensitivitylevel1 •Compliantterminations • | VishayVishay Siliconix 威世科技 | Vishay | ||
SolidTantalumSurfaceMountChipCapacitors | VishayVishay Siliconix 威世科技 | Vishay | ||
SolidTantalumChipCapacitorsTantamountCommercial,SurfaceMountforSwitchModePowerSuppliesandConverters | VishayVishay Siliconix 威世科技 | Vishay | ||
SolidTantalumSurfaceMountCapacitorsTANTAMOUNT®,MoldedCase,LowESR | VishayVishay Siliconix 威世科技 | Vishay | ||
SolidTantalumSurfaceMountChipCapacitorsTANTAMOUNT™,MoldedCase,LowESR FEATURES •LowESR •Moldedcaseavailableinfivecasecodes •Terminations:100mattetinstandard, tin/leadavailable •Highripplecurrentcarryingcapability •Compatiblewith“highvolume”automaticpick andplaceequipment •QualifiedtoEIA-717 •Moisturesensitivitylevel1 • | VishayVishay Siliconix 威世科技 | Vishay | ||
ST62in-circuitprogramming | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
NPNSILICONRFPOWERTRANSISTOR DESCRIPTION: TheASITPV593isaCommonEmitterDeviceDesignedforClassAHighLinearityTelevisionBandIVandVTransmitterApplications. FEATURESINCLUDE: •GoldMetalization •EmitterBallasting •HighGain | ASI Advanced Semiconductor, Inc | ASI | ||
NPNhigh-voltagetransistors DESCRIPTION NPNhigh-voltagetransistorinaTO-202;SOT128Bplasticpackage. FEATURES •Lowcurrent(max.150mA) •Highvoltage(max.210V). APPLICATIONS •Telephonesystems. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
250WATTS(AC)DC/DCSINGLEOUTPUT 250WATTS(AC)DC/DCSINGLEOUTPUT Features •SingleOutput •3Ux21(24)TEx166.5mm(24TEfor5Voutputs) •Weight1.7kg | POWERBOX Powerbox manufactures | POWERBOX | ||
SmallSignalTransistorsPNP-Amp/SwitchTransistorChip PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize19x19MILS DieThickness9.0MILS BaseBondingPadArea3.5x4.3MILS EmitterBondingPadArea3.5x4.5MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAu-18,000Å | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
3−AHIGH−EFFICIENCYPWMPOWERDRIVER | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
3−AHIGH−EFFICIENCYPWMPOWERDRIVER | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
3?묨HIGH?묮FFICIENCYPWMPOWERDRIVER | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
3?묨HIGH?묮FFICIENCYPWMPOWERDRIVER | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
3−AHIGH−EFFICIENCYPWMPOWERDRIVER | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
DiodesandRectifiers(GeneralPurpose)
| ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
PNPSILICONPLANARHIGHVOLTAGETRANSISTOR SOT89Siliconplanarhighvoltagetransistor Complementarypartnumber-FMMT493 Devicemarking-P93 | Zetex Zetex Semiconductors | Zetex | ||
SOT89Siliconplanarhighvoltagetransistor | Zetex Zetex Semiconductors | Zetex | ||
PNPTransistor Features ●AsComplementaryTypeoftheNPNTransistor FCX493isRecommended ●LowSaturationVoltage ●HighCurrent | PJSEMIDongguan Pingjingsemi Technology Co., Ltd, 平晶半导体东莞市平晶半导体科技有限公司 | PJSEMI |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TEXAS INSTRUMENTS |
22+ |
SMD |
518000 |
明嘉莱只做原装正品现货 |
询价 | ||
BURR-BROWN |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
TI |
22+ |
NA |
500000 |
万三科技,秉承原装,购芯无忧 |
询价 | ||
TI |
1919+ |
NA |
3000 |
原装正品 价格极优 |
询价 | ||
TI |
23+ |
NA |
1231 |
运算放大器 |
询价 | ||
TI |
22+ |
SOT-23 |
5000 |
全新原装正品现货 |
询价 | ||
AMI |
9947 |
QFP |
601 |
本站现货库存 |
询价 | ||
AMI |
9947 |
QFP |
601 |
特价热销现货库存100%原装正品欢迎来电订购! |
询价 | ||
AMIS |
22+ |
SSOP |
4897 |
绝对原装!现货热卖! |
询价 | ||
ERICSSON |
2310+ |
BGA |
3266 |
优势代理渠道,原装现货,可全系列订货 |
询价 |
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