OPA4H014-SEP 11-MHz, Precision, Low-Noise, RRO, JFET Amp in Space?멐nhanced Plastic

文件：1.12625 Mbytes 页数：23 Pages

TI

德州仪器

OPA4H014-SEP 11-MHz, Precision, Low-Noise, RRO, JFET Op Amp in Space‑Enhanced Plastic

1 Features • Radiation tolerant – Single even latch-up (SEL) immune to 43 MeV•cm2/mg – ELDRS free to 30 krad(Si) – Total ionizing dose (TID) RLAT for every wafer lot up to 30 krad(Si) • Space enhanced plastic – Au bondwire and NiPdAu lead finish – Enhanced mold compound for low outgassing

文件：1.53444 Mbytes 页数：32 Pages

TI

德州仪器

OPA4H014-SEP 11-MHz, Precision, Low-Noise, RRO, JFET Op Amp in Space‑Enhanced Plastic

1 Features • Radiation tolerant – Single even latch-up (SEL) immune to 43 MeV•cm2/mg – ELDRS free to 30 krad(Si) – Total ionizing dose (TID) RLAT for every wafer lot up to 30 krad(Si) • Space enhanced plastic – Au bondwire and NiPdAu lead finish – Enhanced mold compound for low outgassing

文件：1.53444 Mbytes 页数：32 Pages

TI

德州仪器

OPA4H014-SEP 11-MHz, Precision, Low-Noise, RRO, JFET Op Amp in Space‑Enhanced Plastic

1 Features • Radiation tolerant – Single even latch-up (SEL) immune to 43 MeV•cm2/mg – ELDRS free to 30 krad(Si) – Total ionizing dose (TID) RLAT for every wafer lot up to 30 krad(Si) • Space enhanced plastic – Au bondwire and NiPdAu lead finish – Enhanced mold compound for low outgassing

文件：1.53444 Mbytes 页数：32 Pages

TI

德州仪器