OPA4H014-SEP 11-MHz, Precision, Low-Noise, RRO, JFET Op Amp in Space‑Enhanced Plastic

1 Features • Radiation tolerant – Single even latch-up (SEL) immune to 43 MeV•cm2/mg – ELDRS free to 30 krad(Si) – Total ionizing dose (TID) RLAT for every wafer lot up to 30 krad(Si) • Space enhanced plastic – Au bondwire and NiPdAu lead finish – Enhanced mold compound for low outgassing

文件：1.53444 Mbytes 页数：32 Pages

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OPA4H014-SEP 11-MHz, Precision, Low-Noise, RRO, JFET Amp in Space?멐nhanced Plastic

文件：1.12625 Mbytes 页数：23 Pages

TI

德州仪器

OPA4H014-SEP 11-MHz, Precision, Low-Noise, RRO, JFET Op Amp in Space‑Enhanced Plastic

1 Features • Radiation tolerant – Single even latch-up (SEL) immune to 43 MeV•cm2/mg – ELDRS free to 30 krad(Si) – Total ionizing dose (TID) RLAT for every wafer lot up to 30 krad(Si) • Space enhanced plastic – Au bondwire and NiPdAu lead finish – Enhanced mold compound for low outgassing

文件：1.53444 Mbytes 页数：32 Pages

TI

德州仪器

采用增强型航天塑料的耐辐射四路 11MHz 低噪声精密 RRIO JFET 放大器

The OPA4H014-SEP is a low-power JFET input operation amplifier (op amp) that features good drift and low input bias current. With an input range that includes V– and a rail-to-rail output, designers can take advantage of the low-noise characteristics of JFET amplifiers while interfacing to single-su • Radiation hardened \n•cm2/mg\n• Total ionizing dose (TID) RLAT for every wafer lot up to 30 krad(Si)\n• Space enhanced plastic \n• Enhanced mold compound for low outgassing\n• Extended product life cycle\n• Product traceability \n• Very-low offset drift: 1 µV/°C maximum\n• Low input bias current: ;

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德州仪器