丝印：200E104E；Package：CFP15B；200 V, 4 A hyperfast recovery rectifier

Features and benefits • Reverse voltage: VR ≤ 200 V • Forward current: IF ≤ 4 A • Switching time: trr ≤ 30 ns • Pt doped life time control • Low inductance • Power and flat lead SMD plastic package • Package height typical 0.95 mm • High power capability due to clip-bond technology • Plan

文件：261.589 Kbytes 页数：12 Pages

NEXPERIA

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丝印：200E104E；Package：CFP15B；200 V, 4 A hyperfast recovery rectifier

Features and benefits • Reverse voltage: VR ≤ 200 V • Forward current: IF ≤ 4 A • Switching time: trr ≤ 30 ns • Pt doped life time control • Low inductance • Power and flat lead SMD plastic package • Package height typical 0.95 mm • High power capability due to clip-bond technology • Plan

文件：260.49 Kbytes 页数：11 Pages

NEXPERIA

安世

200 V, 4 A hyperfast recovery rectifier

Features and benefits • Reverse voltage: VR ≤ 200 V • Forward current: IF ≤ 4 A • Switching time: trr ≤ 30 ns • Pt doped life time control • Low inductance • Power and flat lead SMD plastic package • Package height typical 0.95 mm • High power capability due to clip-bond technology • Plan

文件：260.49 Kbytes 页数：11 Pages

NEXPERIA

安世

200 V, 4 A hyperfast recovery rectifier

Features and benefits • Reverse voltage: VR ≤ 200 V • Forward current: IF ≤ 4 A • Switching time: trr ≤ 30 ns • Pt doped life time control • Low inductance • Power and flat lead SMD plastic package • Package height typical 0.95 mm • High power capability due to clip-bond technology • Plan

文件：261.589 Kbytes 页数：12 Pages

NEXPERIA

安世

200 V, 4 A hyperfast recovery rectifier

High power density, hyperfast switching time recovery rectifier with high-efficiency planar technology, encapsulated in a CFP15B (SOT1289B) power and flat lead Surface-Mounted Device (SMD) plastic package. • Reverse voltage: VR ≤ 200 V\n• Forward current: IF ≤ 4 A\n• Switching time: trr ≤ 30 ns\n• Pt doped life time control\n• Low inductance\n• Power and flat lead SMD plastic package\n• Package height typical 0.95 mm\n• High power capability due to clip-bond technology\n• Planar die design;

Nexperia

安世

200 V, 4 A hyperfast recovery rectifier

High power density, hyperfast switching time recovery rectifier with high-efficiency planar technology, encapsulated in a CFP15B (SOT1289B) power and flat lead Surface-Mounted Device (SMD) plastic package. • Reverse voltage: VR ≤ 200 V\n• Forward current: IF ≤ 4 A\n• Switching time: trr ≤ 30 ns\n• Pt doped life time control\n• Low inductance\n• Power and flat lead SMD plastic package\n• Package height typical 0.95 mm\n• High power capability due to clip-bond technology\n• Planar die design\n• Qualifie;

Nexperia

安世

Package：TO-277，3-PowerDFN；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：PNE20040EPE-Q/SOT1289B/CFP15

Nexperia USA Inc.

Package：TO-277，3-PowerDFN；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：PNE20040EPE/SOT1289B/CFP15

Nexperia USA Inc.