PN54SC1G08MDBVTSEP中文资料德州仪器数据手册PDF规格书

1 Features

• VID TBD-01XE

• Radiation - Total Ionizing Dose (TID):

– TID characterized up to 50krad(Si)

– TID performance assurance up to 30krad(Si)

– Radiation Lot Acceptance Testing (RLAT) for

every wafer lot up to 30krad(Si)

• Radiation - Single-Event Effects (SEE):

– Single Event Latch-Up (SEL) immune up to

50MeV-cm2/mg at 125°C

– Single Event Transient (SET) characterized up

to LET = 50MeV-cm2/mg

• Wide operating range of 1.2V to 5.5V

• 5.5V tolerant input pins

• Supports standard pinouts

• Up to 150Mbps with 5V or 3.3V VCC

• Latch-up performance exceeds 100mA per JESD

78

• Space enhanced plastic:

– Supports Defense and Aerospace Applications

– Controlled baseline

– Au bondwire and NiPdAu lead finish

– Meets NASA ASTM E595 outgassing

specification

– One fabrication, assembly, and test site

– Extended product life cycle

– Product traceability

2 Applications

• Enable or disable a digital signal

• Controlling an indicator LED

3 Description

The SN54SC1G08-SEP device performs the Boolean

function or Y = A • B or Y = A + B in positive logic.

The CMOS device has high output drive while

maintaining low static power dissipation over a broad

VCC operating range.