General Purpose Transistor PNP Silicon

General Purpose Transistor PNP Silicon Features •These are Pb-Free Devices*

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安森美半导体

Package：TO-226-3，TO-92-3 长基体（成形引线）；包装：卷带（TR）剪切带（CT） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 60V 0.6A TO92

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安森美半导体

PN2907A / MMBT2907A / PZT2907A 60 V PNP General Purpose Transistor

Description The PN2907A, MMBT2907A, and PZT2907A are 60 V-PNP bipolar transistors designed for use as a gen eral-purpose amplifier or switch in applications that require up to 500 mA. Offered in an ultra-small surface-mount package (SOT-223), the PZT2907A is ideal for space-constrained systems. T

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仙童半导体

60 V PNP General-Purpose Transistor

Features • High DC Current Gain (hFE) Range: 100 ~ 300 • High-Current Gain Bandwidth Product (fT): 200 MHz (Minimum) • Maximum Turn-On Time (ton): 45 ns • Maximum Turn-Off Time (toff): 100 ns • Ultra-Small Surface-Mount Package: SOT-223 (PZT2907A) Description The PN2907A, MMBT2907A, and

文件：691.66 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

PN2907A / MMBT2907A / PZT2907A 60 V PNP General Purpose Transistor

Description The PN2907A, MMBT2907A, and PZT2907A are 60 V-PNP bipolar transistors designed for use as a gen eral-purpose amplifier or switch in applications that require up to 500 mA. Offered in an ultra-small surface-mount package (SOT-223), the PZT2907A is ideal for space-constrained systems. T

文件：685.14 Kbytes 页数：11 Pages

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仙童半导体