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SI2369DS

Materialcategorization

FEATURES •TrenchFET®powerMOSFET •100Rgtested •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS •Formobilecomputing -Loadswitch -Notebookadaptorswitch -DC/DCconverter

VishayVishay Siliconix

威世科技威世科技半导体

SI2369DS

P-ChannelMOSFET

Application| «InterfacingSwitching| «Portableequipmentandbattery LoadSwitch

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟电子台舟电子股份有限公司

SI2369DS-HF

P-ChannelMOSFET

■Features ●VDS(V)=-30V ●ID=-7.6A(VGS=±20V) ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

SO2369

SMALLSIGNALNPNTRANSISTORS

■SILICONEPITAXIALPLANARNPNTRANSISTORS ■MINIATUREPLASTICPACKAGEFORAPPLICATIONINSURFACEMOUNTINGCIRCUITS ■LOWCURRENT,FASTSWITCHINGAPPLICATIONS.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

SO2369A

SMALLSIGNALNPNTRANSISTORS

■SILICONEPITAXIALPLANARNPNTRANSISTORS ■MINIATUREPLASTICPACKAGEFORAPPLICATIONINSURFACEMOUNTINGCIRCUITS ■LOWCURRENT,FASTSWITCHINGAPPLICATIONS.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

SSF2369

PWMapplications

DESCRIPTION TheSSF2369usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. GENERALFEATURES ●VDS=-20V,ID=-3A RDS(ON)

SILIKRONSilikron Semiconductor Co.,LTD.

新硅能微电子新硅能微电子(苏州)有限公司

SSF2369

P-Channel20-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •LoadSwitch •PASwitch •DC/DCConverters

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

TF2369

P-Channel30-V(D-S)MOSFET

GeneralFEATURE ●TrenchFETPowerMOSFET ●Leadfreeproductisacquired ●Surfacemountpackage APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

TUOFENGShenzhen Tuofeng Semiconductor Technology Co

拓锋半导体深圳市拓锋半导体科技有限公司

TLV2369

Cost-Optimized,800-nA,1.8-V,Rail-to-RailI/OOperationalAmplifierwithZero-CrossoverDistortion

TI1Texas Instruments

德州仪器

TLV2369IDGKR

Cost-Optimized,800-nA,1.8-V,Rail-to-RailI/OOperationalAmplifierwithZero-CrossoverDistortion

TI1Texas Instruments

德州仪器

详细参数

  • 型号:

    PN2369A_Q

  • 功能描述:

    两极晶体管 - BJT Switching Transistor NPN

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    PNP 集电极—基极电压

  • VCBO:

    集电极—发射极最大电压

  • VCEO:

    - 40 V 发射极 - 基极电压

  • VEBO:

    - 6 V

  • 增益带宽产品fT:

    直流集电极/Base Gain hfe

  • Min:

    100 A

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    PowerFLAT 2 x 2

供应商型号品牌批号封装库存备注价格
NXP USA Inc.
25+
TO-226-3 TO-92-3(TO-226AA)
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
24+
N/A
56000
一级代理-主营优势-实惠价格-不悔选择
询价
PHILIPS/飞利浦
23+
TO92
50000
全新原装正品现货,支持订货
询价
A
24+
b
9
询价
FSC
23+
TO-92
9526
询价
Fairchild
23+
TO-92
7750
全新原装优势
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
1999
全新原装 货期两周
询价
FAIRCHILD
20+
原装
65790
原装优势主营型号-可开原型号增税票
询价
ON Semiconductor
2022+
原厂原包装
8600
全新原装 支持表配单 中国著名电子元器件独立分销
询价
更多PN2369A_Q供应商 更新时间2025-5-13 14:49:00