丝印：H9F；Package：SOT-23；P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-7.6A (VGS =±20V) ● RDS(ON)

文件：2.25568 Mbytes 页数：6 Pages

KEXIN

科信电子

SMALL SIGNAL NPN TRANSISTORS

■ SILICON EPITAXIAL PLANAR NPN TRANSISTORS ■ MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS ■ LOW CURRENT, FAST SWITCHING APPLICATIONS.

文件：46.12 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

SMALL SIGNAL NPN TRANSISTORS

■ SILICON EPITAXIAL PLANAR NPN TRANSISTORS ■ MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS ■ LOW CURRENT, FAST SWITCHING APPLICATIONS.

文件：46.12 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

PWM applications

DESCRIPTION The SSF2369 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -20V,ID = -3A RDS(ON)

文件：293.95 Kbytes 页数：5 Pages

SILIKRON

新硅能微电子