PM Series - Open Style Power Relay

GENERAL SPECIFICATIONS (@ 25° C) Contacts: Contact Configuration Contact Material Contact Rating 120 / 240VAC Resistive 28VDC Resistive Motor 240VAC 1 Phase Contact Resistance, Initial Coil: Coils Available Nominal Coil Power Input Voltage Tolerance - AC Input Voltage Tolerance - DC

文件：408.01 Kbytes 页数：2 Pages

STRUTHERS-DUNN

PM Series - Open Style Power Relay

GENERAL SPECIFICATIONS (@ 25° C) Contacts: Contact Configuration Contact Material Contact Rating 120 / 240VAC Resistive 28VDC Resistive Motor 240VAC 1 Phase Contact Resistance, Initial Coil: Coils Available Nominal Coil Power Input Voltage Tolerance - AC Input Voltage Tolerance - DC

文件：408.01 Kbytes 页数：2 Pages

STRUTHERS-DUNN

PM Series - Open Style Power Relay

GENERAL SPECIFICATIONS (@ 25° C) Contacts: Contact Configuration Contact Material Contact Rating 120 / 240VAC Resistive 28VDC Resistive Motor 240VAC 1 Phase Contact Resistance, Initial Coil: Coils Available Nominal Coil Power Input Voltage Tolerance - AC Input Voltage Tolerance - DC

文件：408.01 Kbytes 页数：2 Pages

STRUTHERS-DUNN

PM Series - Open Style Power Relay

GENERAL SPECIFICATIONS (@ 25° C) Contacts: Contact Configuration Contact Material Contact Rating 120 / 240VAC Resistive 28VDC Resistive Motor 240VAC 1 Phase Contact Resistance, Initial Coil: Coils Available Nominal Coil Power Input Voltage Tolerance - AC Input Voltage Tolerance - DC

文件：408.01 Kbytes 页数：2 Pages

STRUTHERS-DUNN

丝印：T200EN；Package：SOT223；100 V N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology

文件：336.17 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

100 V N-channel Trench MOSFET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology Applicatio

文件：220.84 Kbytes 页数：13 Pages

恩XP

丝印：T2EPE；Package：SOT223；70 V, P-channel Trench MOSFET

1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic level compatible • Very fast switching • Trench MOSFET technology •

文件：290.7 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：MT21EN；Package：SOT223；30 V, 7.4 A N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Logic-level compatible  Very fast switching  Trench MOSFET technology 1

文件：461.2 Kbytes 页数：16 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

HIGH-SPEED, HIGH-CURRENT SURGE PROTECTORS

DESCRIPTION CP Clare’s PMT(275) and UMT(275) Series surge protectors (350-500V and 550-2500V respectively) provide a high level of protection from high-speed, high-current transient surges. These devices are constructed using a proprietary semiconductor junction process which results in nanosecon

文件：29 Kbytes 页数：3 Pages

Clare

Clare, Inc.

HIGH-SPEED, HIGH-CURRENT SURGE PROTECTORS

DESCRIPTION CP Clare’s PMT(275) and UMT(275) Series surge protectors (350-500V and 550-2500V respectively) provide a high level of protection from high-speed, high-current transient surges. These devices are constructed using a proprietary semiconductor junction process which results in nanosecon

文件：29 Kbytes 页数：3 Pages

Clare

Clare, Inc.